Characterization of thin back-to-back CdTe detectors

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 I, 2001, Pages 1028-1032

  Auricchio, Natalia ^a   Caroli, Ezio ^a   Donati, Ariano ^a   Dusi, Waldes ^a   Fougeres, Paul ^b   Grassi, Donato ^c   Perillo, Eugenio ^d   Siffert, Paul ^e  

^a CNR   (Italy)

^b EURORAD   (France)

^c INFM   (Italy)

^d UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^e Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRODEPOSITION; ELECTRODES; IRRADIATION; PHOTONS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPY; SPECTRUM ANALYSIS; TUNGSTEN;

CADMIUM TELLURIDE DETECTORS; PLANAR PARALLEL FIELD; PLANAR TRANSVERSE FIELD; THIN BACK TO BACK DETECTORS; TUNGSTEN COLLIMATOR;

RADIATION DETECTORS;

EID: 0035428649     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958718     Document Type: Conference Paper

References (4)

1. Spectroscopic behavior of CdTe detectors as a function of the inter-electrode distance
2. Spectroscopic performance of newly designed CdTe detectors
3. Spectroscopic performance of thin CdTe detectors mounted in back-to-back configuration