Development of gamma-ray monitor using CdZnTe semiconductor detector

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 III, 2001, Pages 1570-1576

  Rasolonjatovo, D A H ^a   Shiomi, T ^a   Nakamura, T ^a   Nishizawa, H ^b   Tsudaka, Y ^b   Fujiwara, H ^b   Araki, H ^b   Matsuo, K ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CdZnTe; Detection efficiency; Flat energy response; Gamma ray detection; Gamma ray monitor; Monte Carlo code; X ray detection

Indexed keywords

COMPUTER SIMULATION; GAMMA RAYS; MONTE CARLO METHODS; PHOTONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICES; X RAYS;

FLAT ENERGY RESPONSE; GAMMA RAY DETECTION; GAMMA-RAY MONITOR; SEMICONDUCTOR DETECTOR; X RAY DETECTION;

RADIATION DETECTORS;

EID: 0035428577     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958398     Document Type: Conference Paper

References (10)

1. CdTe and CdZnTe crystals for room temperature gamma-ray detectors
2. Influence of deep levels on CdZnTe nuclear detectors
3. Comparison of four types of gamma and X-ray detectors for environmental applications in the 10-450 keV energy range
4. Measurement of the photon energy-absorption coefficient for air, nitrogen at 30 keV
5. The EGS4 code system
6. Development of multi-layered CdTe semiconductor detectors
7. Cadmium zinc telluride spectral modeling
8. Conversion coefficients for use in radiological protection against external radiation