Study on a novel gas sensor

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Volumn 29, Issue 8, 2001, Pages 1083-1085

  Xie, Dan ^a   Jiang, Ya Dong ^a   Jiang, Jian Zhuang ^a   Wu, Zhi Ming ^a   Li, Yan Rong ^a   Pan, Wei ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

(Langmuir Blodgett)(LB) film; ChemFET; Gas sensor; MOSFET; Nitrogen dioxide (NO2); Praseodymium bis phthalocyaninato complex

Indexed keywords

CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS; FILMS; MOSFET DEVICES; NITROGEN COMPOUNDS; SEMICONDUCTOR MATERIALS;

DRAIN CURRENT; FILM FORMING MATERIALS; GAS EXPOSURE; GAS SENSORS; LANGMUIR BLODGETT FILMS; NITROGEN DIOXIDE GAS; NITROGEN DIOXIDES;

CHEMICAL SENSORS;

EID: 0035428293     PISSN: 03722112     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Field-effect transistor with polyaniline thin film as semiconductor
2. The design and characteristics of a porphyrin LB ChemFET gas sensor
3. Synthesis, spectroscopic and electrochemical properties of substituted bis (phthalocyaninato) lanthanide (III) Complexes
4. Electrical characteristics of polyaniline/silicon hybrid field-effect transistor gas sensor