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Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 224-231

Growth of large diameter silicon tube by EFG technique: Modeling and experiment

(6) Roy, A a,c Zhang, H a Prasad, V a Mackintosh, B b Ouellette, M b Kalejs, J P b

a STONY BROOK UNIVERSITY (United States)

b ASE Americas Inc (United States)

c CFD RESEARCH CORPORATION (United States)

Author keywords

A1. Growth models; A2. Edge defined film fed growth; A2. Tube growth

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH;

EDGE-DEFINED FILM-FED GROWTH (EFG);

SEMICONDUCTING SILICON;

EID: 0035426611 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01327-6 Document Type: Conference Paper

Times cited : (20)

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9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.