Erratum: Density-gradient analysis of MOS tunneling (IEEE Trans. Electron Devices (2000) 47 (2310-2319))

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1750-

  Ancona, M G ^a   Yu, Z ^b   Dutton, R W ^b   Vande Voorde, P J ^c   Vook, D ^c   Cao, M ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Stanford University   (United States)

^c AGILENT TECHNOLOGIES   (United States)

^d PDF SOLUTIONS INC   (United States)

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EID: 0035424984     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/ted.2001.936701     Document Type: Erratum

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