Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1429-1435

  Das, A ^a   Gordon, I ^a   Wagner, P ^a   Cannaerts, M ^a   Moshchalkov, V V ^a   Bruynseraede, Y ^a   Schuddinck, W ^b   Van Tendeloo, G ^b   Borghs, G ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035424167     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380217     Document Type: Article

References (31)

1. G. H. Jonker and J. H. Van Santen, Physica (Utrecht) 16, 337 (1950).
2. P. G. de Gennes, Phys. Rev. 118, 141 (1960); and references therein.
3. R. von Helmolt, J. Wecker, B. Holzapfel, L. Schultz, and K. Samwer, Phys. Rev. Lett. 71, 2331 (1993).
4. A. P. Ramirez, J. Phys.: Condens. Matter 9, 8171 (1997).
5. J. M. D. Coey, M. Viret, and S. von Molnár, Adv. Phys. 48, 167 (1999).
6. H. Y. Hwang, S-W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 77, 2041 (1996).
7. A. Gupta, C. Q. Gong, G. Xiao, P. R. Duncombe, P. Lecouer, P. Trouilloud, Y. Y. Wang, V. P. Dravid, and J. Z. Sun, Phys. Rev. B 54, R15629 (1996).
8. N. D. Mathur, G. Burnell, S. P. Isaac, T. J. Jackson, B. S. Seo, J. I. MacManus-Driscoll, L. F. Cohen, J. E. Evetts, and M. G. Blamire, Nature (London) 387, 266 (1997).
9. M. Ziese, G. Heydon, R. Höhne, P. Esqauinazi, and J. Dienelt, Appl. Phys. Lett. 74, 1481 (1999).
10. X. W. Li, A. Gupta, G. Q. Gong, and G. Xiao, Appl. Phys. Lett. 71, 1124 (1997).
11. H. S. Wang, Q. Li, K. Liu, and C. L. Chien, Appl. Phys. Lett. 74, 2212 (1999).
12. J. M. Liu, J. Li, Q. Huang, L. P. You, S. J. Wang, C. K. Ong, Z. C. Wu, Z. G. Liu, and Y. W. Du, Appl. Phys. Lett. 76, 2286 (2000).
13. W. H. Weinberg, C. M. Reaves, B. Z. Nosho, R. I. Pelzel, and S. P. DenBaars, in Handbook of Nanostructured Materials and Nanotechnology, edited by H. S. Nalwa (2000) Vol. 1, p. 295.
14. A. J. Millis, T. Darling, and A. Migliori, J. Appl. Phys. 83, 1588 (1998).
15. F. Tsui, M. C. Smoak, T. K. Nath, and C. B. Eom, Appl. Phys. Lett. 76, 2421 (2000).
16. E. Gommert, H. Cerva, J. Wecker, and K. Samwer, J. Appl. Phys. 85, 5417 (1999).
17. H. S. Wang, E. Wertz, Y. F. Hu, Q. Li, and D. G. Schlom, J. Appl. Phys. 87, 7409 (2000).
18. S. Jin, T. H. Tiefel, M. McCormack, H. M. O'Bryan, L. H. Chen, R. Ramesh, and D. Schurig, Appl. Phys. Lett. 67, 557 (1995).
19. S. I. Khartsev, P. Johnsson, and A. M. Grishin, J. Appl. Phys. 87, 2394 (2000).
20. W. Prellier, Ch. Simon, A. M. Haghiri-Gosnet, B. Mercey, and B. Raveau, 2000, cond-mat/007101.
21. O. I. Lebedev, G. Van Tendeloo, S. Amelinckx, F. Leibold, and H. U. Habermeier, Phys. Rev. B 58, 8065 (1998).
22. J. Z. Sun, D. W. Abraham, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 74, 3017 (1999).
23. C. D. Potter, R. Schad, P. Beliën, G. Verbanck, V. V. Moshchalkov, Y. Bruynseraede, M. Schäfer, R. Schäfer, and P. Grünberg, Phys. Rev. B 49, R16055 (1994).
24. P. Wagner, I. Gordon, S. Mangin, V. V. Moshchalkov, Y. Bruynseraede, L. Pinsard, and A. Revcolevschi, Phys. Rev. B 61, 529 (2000); Y. Tokura and N. Nagaosa, Science 288, 462 (2000).
25. P. Wagner, I. Gordon, S. Mangin, V. V. Moshchalkov, Y. Bruynseraede, L. Pinsard, and A. Revcolevschi, Phys. Rev. B 61, 529 (2000); Y. Tokura and N. Nagaosa, Science 288, 462 (2000).
26. P. Wagner, I. Gordon, J. Vanacken, F. Herlach, V. V. Moshchalkov, and Y. Bruynseraede, Phys. Rev. Lett. 81, 3980 (1998); and references therein.
27. G. E. Pike and C. H. Seager, Phys. Rev. B 10, 1421 (1974).
28. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
29. H. Y. Hwang and S-W. Cheong, Nature (London) 389, 943 (1997).
30. J. H. Park, E. Vescovo, H. J. Kim, C. Kwon, R. Ramesh, and T. Venkatesan, Phys. Rev. Lett. 81, 1953 (1998).
31. p). This is in contrast to all other strips, being quasimetallic at lowest temperatures.