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Volumn 56, Issue 3-4, 2001, Pages 339-352

Self-heating effects in SOI bipolar transistors

Author keywords

Electrothermal simulations; Self heating effects; SOI bipolar transistors; Thermal resistance

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INSULATORS; HEAT RESISTANCE; SILICA; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY;

EID: 0035423335     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00571-8     Document Type: Article
Times cited : (20)

References (16)
  • 3
    • 0000707844 scopus 로고
    • Thermal properties of high-power transistors
    • R.H. Winkler, Thermal properties of high-power transistors, IEEE Trans. Electron Dev., 14 (1967).
    • (1967) IEEE Trans. Electron Dev. , vol.14
    • Winkler, R.H.1
  • 5
    • 0028752471 scopus 로고
    • Modeling and simulation of high speed, high voltage bipolar SOI transistor with fully depleted collector
    • T. Arnborg, Modeling and simulation of high speed, high voltage bipolar SOI transistor with fully depleted collector, IEDM Tech. Digest (1994) 743.
    • (1994) IEDM Tech. Digest , pp. 743
    • Arnborg, T.1
  • 6
    • 0029184764 scopus 로고
    • Analysis of new high-voltage bipolar silicon-on-insulator transistor with fully depleted collector
    • T. Arnborg, A. Litwin, Analysis of new high-voltage bipolar silicon-on-insulator transistor with fully depleted collector, IEEE Trans. Electron Dev., 42 (1995).
    • (1995) IEEE Trans. Electron Dev. , vol.42
    • Arnborg, T.1    Litwin, A.2
  • 7
    • 0028714816 scopus 로고
    • Thermal behaviour of lateral power devices on SOI substrates
    • Davos, Switzerland
    • H. Neubrand, R. Constapel, R. Boot, M. Füllmann, A. Boose, Thermal behaviour of lateral power devices on SOI substrates, in: Proc. ISPSD, Davos, Switzerland, 1994.
    • (1994) Proc. ISPSD
    • Neubrand, H.1    Constapel, R.2    Boot, R.3    Füllmann, M.4    Boose, A.5
  • 8
    • 0004022746 scopus 로고    scopus 로고
    • Silvaco International Inc.
    • ATLAS User's Manual, Silvaco International Inc., 1996.
    • (1996) ATLAS User's Manual
  • 11
    • 0029368377 scopus 로고
    • Transient measurements of heat distribution in devices fabricated on silicon-on-diamond material
    • B. Edholm, A. Söderbarg, J. Olsson, E. Johansson, Transient measurements of heat distribution in devices fabricated on silicon-on-diamond material, Jpn. J. Appl. Phys. 34 (1995) 4706-4714.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 4706-4714
    • Edholm, B.1    Söderbarg, A.2    Olsson, J.3    Johansson, E.4
  • 12
    • 0015280355 scopus 로고
    • Steady-state junction temperatures of semiconductor chips
    • R.D. Lindsted, R.J. Surty, Steady-state junction temperatures of semiconductor chips, IEEE Trans. Electron Dev. ED-19 (1972) 41-44.
    • (1972) IEEE Trans. Electron Dev. , vol.ED-19 , pp. 41-44
    • Lindsted, R.D.1    Surty, R.J.2
  • 14
    • 0027697678 scopus 로고
    • Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities
    • W. Liu, S. Nelson, D.G. Hill, A. Khatibzadeh, Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities, IEEE Trans. Electron Dev. 40 (1993).
    • (1993) IEEE Trans. Electron Dev. , vol.40
    • Liu, W.1    Nelson, S.2    Hill, D.G.3    Khatibzadeh, A.4
  • 15
    • 0028757872 scopus 로고
    • Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices
    • E. Arnold, H. Pein, S.P. Herko, Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices, IEEE IEDM Tech. Digest (1994) 813.
    • (1994) IEEE IEDM Tech. Digest , pp. 813
    • Arnold, E.1    Pein, H.2    Herko, S.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.