Study of radiation effects on bipolar transistors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 179, Issue 3, 2001, Pages 397-402

  Colder, A ^a   Croitoru, N ^b,c   D'Angelo, P ^b   De Marchi, M ^b,d   Fallica, G ^d   Leonardi, S ^d   Levalois, M ^a   Marcolongo, S ^b   Marie, P ^a   Modica, R ^d   Rancoita, P G ^b   Seidman, A ^b,c  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b INFN SEZIONE DI MILANO   (Italy)

^c TEL AVIV UNIVERSITY   (Israel)

^d STMICROELECTRONICS   (Italy)

Author keywords

Bipolar transistors; Deterioration; Frenkel pairs; Nuclear irradiation

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; GAIN MEASUREMENT; NEUTRON IRRADIATION; POSITIVE IONS; RADIATION EFFECTS;

FRENKEL PAIR DENSITIES;

BIPOLAR TRANSISTORS;

EID: 0035420256     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00582-1     Document Type: Article

References (10)

1. RHBIP1 technology evaluation to total dose, low dose rate and neutrons, for LHC experiments and space applications