Developments of new concept analytical instruments for failure analyses of sub-100 nm devices

Microelectronics Reliability

Volumn 41, Issue 8, 2001, Pages 1171-1183

  Mitsui, Yasuhiro ^a   Yano, Fumiko ^a   Kakibayashi, Hiroshi ^a   Shichi, Hiroyasu ^a   Aoyama, Takashi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED TOMOGRAPHY; ION BEAMS; MASS SPECTROMETERS; SENSITIVITY ANALYSIS; SUBMILLIMETER WAVES; TRANSMISSION ELECTRON MICROSCOPY;

SPUTTERED NEUTRAL MASS SPECTROMETERS;

FAILURE ANALYSIS;

EID: 0035417461     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00105-6     Document Type: Article

References (10)

1. Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization
2. Analyses of composition and chemical shift of silicon oxynitride film using energy-filtering transmission electron microscope based spatially resolved electron energy loss spectroscopy
3. High resolution z-contrast imaging of crystals
4. Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
5. Ultra clean technology: ULSI processing's crucial factor
6. Quantitative analysis of trace water in highly purified nitrogen gas by atmospheric pressure ionization mass spectrometer
7. Glow discharge atomic spectroscopy
8. A novel TiN/Ti contact plug technology for gigabit scale DRAM using Ti-PECVD and TiN-LPCVD