Low voltage and temperature effects on SILC in stressed ultrathin oxide films

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1371-1381

  Meinertzhagen, A ^a   Zander, D ^a   Petit, C ^a   Jourdain, M ^a   Gogenheim, D ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b Laboratoire d'Etude En Microélectronique Et Matériaux De l'Isem   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TRAPS; ELECTRON TUNNELING; HOLE TRAPS; LEAKAGE CURRENTS; MOS DEVICES; THRESHOLD VOLTAGE;

STRESS-INDUCED LEAKAGE CURRENTS (SILC);

ULTRATHIN FILMS;

EID: 0035417349     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00071-5     Document Type: Article

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