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Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 925-930

Oxygen and indium diffusion into SiO2 encapsulated polycrystalline CdSe films

(6) Langford, R M a Lee, M J b Wright, S W b Judge, C P b Chater, R J b Tate, T J b

a UNIVERSITY OF OXFORD (United Kingdom)

b IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

CdSe films; Indium diffusion; Oxygen diffusion

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; DIFFUSION; GRAIN BOUNDARIES; INDIUM; MATHEMATICAL MODELS; OXYGEN; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM TELLURIDE; SILICA; TEMPERATURE DISTRIBUTION;

POLYCRYSTALLINE FILMS;

SEMICONDUCTING FILMS;

EID: 0035415635 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02657712 Document Type: Article

Times cited : (5)

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