Accurate validation of experimental results of interdiffused InGaAs/GaAs strained quantum wells by suitable numerical methods

Superlattices and Microstructures

Volumn 30, Issue 2, 2001, Pages 61-67

  Prol, Miguel ^a   Moredo Araújo, Alfonso ^a   Javier Fraile Pelaez F ^a   Gómez Alcalá, Rafael ^b  

^a UNIVERSITY OF VIGO   (Spain)

^b UNIVERSITY OF EXTREMADURA   (Spain)

Author keywords

Galerkin method; Green's function; InGaAs GaAs quantum well; Interdiffusion; Strain

Indexed keywords

GALERKIN METHODS; GREEN'S FUNCTION; INTERDIFFUSION (SOLIDS); LIGHT ABSORPTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

STRAINED QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035414974     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.0991     Document Type: Article

References (11)

1. Exciton Green's function method for interdiffused InGaAs/GaAs strained quantum wells
2. Estimation of material parameters in InGaAs/InAlAs MQW by an exciton Green's function-based model