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Journal of Materials Research

Volumn 16, Issue 7, 2001, Pages 2124-2129

Electromigration properties of multigrain aluminum thin film conductors as influenced by grain boundary structure

(3) Kononenko, O V a Matveev, V N a Field, D P b

a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS (Russian Federation)

b Washington State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ANNEALING; ELECTROMIGRATION; GRAIN BOUNDARIES; PERCOLATION (SOLID STATE); POLYCRYSTALLINE MATERIALS;

ALUMINUM THIN FILM CONDUCTORS;

THIN FILMS;

EID: 0035410804 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2001.0289 Document Type: Article

Times cited : (11)

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