Electrical properties of n-GaP/p-Si heterojunction

Indian Journal of Pure and Applied Physics

Volumn 39, Issue 7, 2001, Pages 450-454

  Ashery, A ^b   Metwally, H S ^a   Terra, F S ^b   El Shazly, A A ^a  

^a Ain Shams University   (Egypt)

^b NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035402630     PISSN: 00195596     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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