Characteristics of irradiated silicon microstrip detectors with 〈1 0 0〉 and 〈1 1 1〉 substrates

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 466, Issue 2, 2001, Pages 354-358

  Akimoto, T ^a   Arai, S ^a   Hara, K ^a   Nakayama, T ^a   Ikegami, Y ^b   Iwata, Y ^c   Kobayasi, H ^a   Kohriki, T ^b   Kondo, T ^b   Nakano, I ^d   Ohsugi, T ^c   Shimojima, M ^a   Shinma, S ^a   Takashima, R ^e   Terada, S ^b   Ujiie, N ^b   Unno, Y ^b   Yamamoto, K ^f   Yamamura, K ^f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d OKAYAMA UNIVERSITY   (Japan)

^e KYOTO UNIVERSITY OF EDUCATION   (Japan)

^f CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

1 1 1 ; 100 ; ATLAS SCT; Charge collection; Interstrip capacitance; Radiation damage; Silicon microstrip detector; Wafer direction

Indexed keywords

CAPACITANCE MEASUREMENT; IRRADIATION; MICROSTRIP DEVICES; RADIATION DAMAGE; SILICON SENSORS; SILICON WAFERS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

INTERSTRIP CAPACITANCES; SILICON MICROSTRIP DETECTORS;

PARTICLE DETECTORS;

EID: 0035399382     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00588-5     Document Type: Conference Paper

References (5)

1. Radiation damage studies of silicon microstrip sensors
2. Comparative study of 1 1 1 and 1 0 0 crystals and capacitance measurements on Si strip detectors in CMS
3. The ABCD binary readout chip for silicon strip detectors in the atlas silicon tracker
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