Growth and conductive type control of ZnSe single crystals by vertical Bridgman method

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 69-73

  Wang, J F ^a   Omino, A ^b   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Doping; A2. Bridgman technique; A2. Growth from melt; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CAPACITANCE; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS;

VERTICAL BRIDGMAN METHOD;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035398933     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01096-X     Document Type: Article

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