High frequency performance of large-grain polysilicon-on-insulator MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1480-1482

  Wang, H ^a   Jagar, S ^a   Lam, S ^a   Chan, M ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Large grain polysilicon on insulator (LGSOI); MOSFETs; Unity short circuit current gain frequency

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; FABRICATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILM TRANSISTORS;

METAL-INDUCED-LATERAL CRYSTALLIZATION (MILC);

MOSFET DEVICES;

EID: 0035397710     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930672     Document Type: Article

References (11)

1. Surface free technology laser annealing (SUFTLA)
2. Novel fingerprint scanning arrays using polysilicon TFTs on glass and polymer substrates
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5. Low- power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET
6. Low-leakage germanium-seeded laterally-crystallizaed single-grain 100-nm TFTs for vertical integration applications
7. Pd induced lateral crystallization of amorphous Si thin film
8. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
9. Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization
10. Submicron super TFTs for three-dimensional VLSI applications
11. Modeling of grain size variation effects in polycrystalline thin film transistor