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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1543-1548

Molecular dynamics simulations of the trapping of ethane on Si(100)-(2×1): Effect of rotational energy and surface temperature

(4) Reeves, C T a Stiehl, J D a Mullins, C B a Sitz, G O b

a The University of Texas at Austin (United States)

b UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ETHANE; MATHEMATICAL MODELS; MOLECULAR VIBRATIONS; POTENTIAL ENERGY; PROBABILITY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; THERMAL EFFECTS;

MOLECULAR DYNAMICS SIMULATIONS; ROTATIONAL ENERGY;

MOLECULAR DYNAMICS;

EID: 0035394822 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1366703 Document Type: Article

Times cited : (4)

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