A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 7, 2001, Pages 1132-1137

  Wohlmuth, H D ^a   Simburger W ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Base station; IP3; Mixer; MMIC; Radio frequency (RF); Silicon

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; GAIN MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; LIMITERS; MIXER CIRCUITS; MOBILE RADIO SYSTEMS; RADIO RECEIVERS; RADIO STATIONS; SEMICONDUCTING SILICON;

BASE STATION; NOISE FIGURE; SILICON BIPOLAR PRODUCTION TECHNOLOGY; THIRD-ORDER INTERCEPT POINT;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035391017     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.933472     Document Type: Article

References (7)

1. Design of RF integrated circuits using SiGe bipolar technology
2. A 1.9-GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems
3. A 20-mA receive 55-mA transmit GSM transceiver in 0.25-μm CMOS
4. Comparison of linearization techniques for differential amplifiers in integrated circuit design
5. B6HF: A 0.8-μm 25-GHz/25-ps BIPOLAR technology for "mobile radio" and "ultra-fast data link" IC products
6. 2-GHz Meißner VCO in Si bipolar technology