Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1159-1163

  Lim, D G ^a   Jang, B S ^a   Moon, S I ^a   Won, C Y ^a   Yi, J ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Ferroelectric random access memory (FRAM); LiNbO3; Metal ferroelectric semiconductor (MFS); Rapid thermal annealing (RTA); Remanent polarization

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRON TRAPS; FERROELECTRIC THIN FILMS; FILM GROWTH; LEAKAGE CURRENTS; LITHIUM NIOBATE; MOSFET DEVICES; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; REMANENCE; SEMICONDUCTING SILICON; SUBSTRATES;

FERROELECTRIC RANDOM ACCESS MEMORIES (FRAM); METAL FERROELECTRIC SEMICONDUCTOR (MFS) CAPACITORS;

MOS CAPACITORS;

EID: 0035390548     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00042-9     Document Type: Article

References (17)