Improved pulse carrier MI effect by flash anneal of amorphous wires and FM wireless CMOS IC torque sensor

IEEE Transactions on Magnetics

Volumn 37, Issue 4 I, 2001, Pages 2038-2041

  Cai, Chang Mei ^b   Mohri, Kaneo ^a,b   Honkura, Yoshinobu ^c   Yamamoto, Michiharu ^c  

^a IEEE   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c AICHI STEEL CORPORATION   (Japan)

Author keywords

Amorphous wire; CMOS IC wireless MI sensor; Flash anneal; Magneto impedance; Torque sensor; Twisting

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; MAGNETOSTRICTIVE DEVICES; SENSORS; TORQUE MEASUREMENT;

AMORPHOUS WIRES; MAGNETO-IMPEDANCE (MI) EFFECT; TORQUE SENSORS;

AMORPHOUS MATERIALS;

EID: 0035386310     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.951046     Document Type: Article

References (5)

1. Application of amorphous magnetic wires to computer peripherals
2. Asymmetrical magneto-impedance effect in amorphous wire with a coil
3. Asymmetrical magneto-impedance effect in twisted amorphous wires for sensitive magnetic sensors
4. Pulse response bistable magneto-impedance effect in amorphous wires
5. Pulse magnetization magneto-impedance effect in amorphous wires for FM type wireless CMOS IC MI sensor