Optical and electrical properties of Ge10+xSe40Te50−x thin film

Journal of Materials Research

Volumn 16, Issue 6, 2001, Pages 1549-1553

  Fayek, S A ^a   El Ocker, M ^b   Hassanien, A S ^c  

^a NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

^b Al Azhar University   (Egypt)

^c ZAGAZIG UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; ELECTRIC PROPERTIES; ELECTRON TRANSITIONS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; LIGHT ABSORPTION; OPTICAL PROPERTIES; TERNARY SYSTEMS; THIN FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

COHESIVE ENERGY (CE); VACUUM DEPOSITION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0035382241     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2001.0215     Document Type: Article

References (23)