Electronic properties of carbon nanotubes with a pentagon-heptagon pair defect

Chinese Physics

Volumn 10, Issue 6, 2001, Pages 531-536

  Hu, Hui Fang ^a   Li, Yi Bing ^a   Zhou, Wei Ya ^b   Tang, Dong Sheng ^b  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Carbon nanotubes; Densities of states; Electronic properties; Pentagon heptagon pair defect

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRONIC PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS);

DENSITIES OF STATES; DENSITY OF STATES; PENTAGON-HEPTAGON PAIR DEFECT;

CARBON NANOTUBES;

EID: 0035373820     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/10/6/313     Document Type: Article

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