The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures

Microelectronics Reliability

Volumn 41, Issue 6, 2001, Pages 927-931

  Mao, Lingfeng ^a   Tan, Changhua ^a   Xu, Mingzhen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

WENTEL-KRAMERS-BRILLOUIN APPROXIMATION;

MOSFET DEVICES;

EID: 0035367697     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00037-3     Document Type: Article

References (18)

1. On tunneling in metal-oxide-silicon structures
2. 1.5 nm direct-tunneling gate oxide Si MOSFETs
3. Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
4. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
5. Modeling study of ultra-thin gate oxides using tunneling current and capacitance-voltage measurements in MOS devices
6. 2
7. Reliability of ultrathin gate oxide below 3 nm in the direct tunneling regime
8. 2/Si structures
9. Practical model for low electric field direct-tunneling current characteristics in nanometer-thick oxide films
10. 2 film
11. Analytic model for direct tunneling current in polcrystallinesilicon-gatemetal-oxide-semiconductor devices
12. Analytic model of direct tunnel current through ultrathin gate oxides
13. Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures
14. Calculation of transmission tunneling current across arbitrary potential barriers
15. Exact solution of the Schrodinger equation across an arbitrary one-dimensional piecewise-linear potential barrier
16. Cuurent-voltage characteristics of metal-insulator-semiconductor structures via mechanical tunneling