Luminescence of silicon thin film and SiGe multiple quantum wells realized on SOI

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 107-110

  Calvo, V ^a   Sotta, D ^a   Ulmer, H ^a   Hadji, E ^a   Magnea, N ^a   Dumont, F ^b   Moriceau, H ^b   Hernandez, C ^c   Campidelli, Y ^c  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c ORANGE LABS   (France)

Author keywords

Carrier localization; Electron hole liquid; Exciton; SOI wafer

Indexed keywords

EXCITONS; HOLE MOBILITY; LUMINESCENCE OF SOLIDS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION;

CARRIER LOCALIZATION;

OPTICAL FILMS;

EID: 0035361127     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00030-1     Document Type: Conference Paper

References (9)