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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 B, 2001, Pages 4325-4327

Improvement in aspect ratio of p-GaAs oxide fabricated by atomic force microscope (AFM)-based nanolithography using pulsed voltage

(5) Matsuzaki, Y a Hasui, S a Kamada, S Y a Yamada, A a Konagai, M a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AFM oxidation; High aspect ratio; Nanoscale patterning; p GaAs; Voltage modulation

Indexed keywords

ANODIC OXIDATION; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; ETCHING; NANOTECHNOLOGY; OPTIMIZATION; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; VOLTAGE CONTROL;

PULSED VOLTAGES; SURFACE OXIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035357432 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4325 Document Type: Article

Times cited : (13)

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