High-Temperature Morphological Evolution of Lithographically Introduced Cavities in Silicon Carbide

Journal of the American Ceramic Society

Volumn 84, Issue 5, 2001, Pages 921-928

  Narushima, Takayuki ^a   Glaeser, Andreas M ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; DIFFUSION; HIGH TEMPERATURE PROPERTIES; ION BEAM LITHOGRAPHY; MORPHOLOGY; OPTICAL MICROSCOPY; REACTION KINETICS; SINGLE CRYSTALS; SOLID STATE PHYSICS;

ION BEAM ETCHING; SILICON CARBIDE SINGLE CRYSTAL; SOLID STATE DIFFUSION BONDING; SURFACE DIFFUSION; SURFACE ENERGY ANISOTROPY;

SILICON CARBIDE;

EID: 0035354009     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb00769.x     Document Type: Article

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