Enhancement of the 1.31-μm emission properties of Dy3+-doped Ge–Ga–S glasses with the addition of alkali halides

Journal of Materials Research

Volumn 16, Issue 5, 2001, Pages 1318-1324

  Shin, Yong Beom ^a   Heo, Jong ^b   Kim, Hyoun Soo ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); DYSPROSIUM; FIBER OPTICS; LIGHT EMISSION; MULTIPHOTON PROCESSES; RAMAN SCATTERING; RELAXATION PROCESSES;

MULTIPHOTON RELAXATION;

OPTICAL GLASS;

EID: 0035352062     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2001.0184     Document Type: Article

References (23)