Drift mobility of carriers in porous silicon

Semiconductors

Volumn 35, Issue 5, 2001, Pages 588-590

  Averkiev, N S ^a   Kazakova, L P ^a   Lebedev, E A ^a   Smirnova, N N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035343882     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1371627     Document Type: Article

References (13)

1. O. Klima, P. Hlinomaz, A. Hospodkova, et al., J. Non-Cryst. Solids 162-164, 961 (1993).
2. É. A. Lebedev, G. Polisskiǐ, and V. Petrova-Koch, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1468 (1996) [Semiconductors 30, 772 (1996)].
3. É. A. Lebedev, G. Polisskiǐ, and V. Petrova-Koch, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1468 (1996) [Semiconductors 30, 772 (1996)].
4. L. P. Kazakova, A. A. Lebedev, and É. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 609 (1997) [Semiconductors 31, 517 (1997)].
5. L. P. Kazakova, A. A. Lebedev, and É. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 609 (1997) [Semiconductors 31, 517 (1997)].
6. E. A. Lebedev, E. A. Smorgonskaya, and G. Polisski, Phys. Rev. B 57, 14607 (1998).
7. P. Rao, E. A. Schiff, L. Tsybeskov, and P. M. Fauchet, in Abstracts of the Int. Conference "Porous Semiconductors - Science and Technology", Mallorca, 1998, p. 53.
8. W. E. Spear, J. Non-Cryst. Solids 1, 197 (1969).
9. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973).
10. M. Ben-Chorin, F. Möller, F. Koch, et al., Phys. Rev. B 51 (4), 2199 (1995).
11. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1979; Mir, Moscow, 1982).
12. S. P. Kobeleva, T. N. Bakhtigaraev, E. A. Petrova, and A. F. Orlov, in Proceedings of the 2nd All-Russia Conference on Science of Materials and Physicochemical Foundations of Doped Silicon Crystal Technology, Moscow, 2000, p. 348.
13. E. A. Petrova, K. N. Bogoslovskaya, L. A. Balagurov, and G. I. Kocharadze, in Proceedings of the 2nd All-Russia Conference on Science of Materials and Physicochemical Foundations of Doped Silicon Crystal Technology, Moscow, 2000, p. 365.