Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors

Microelectronic Engineering

Volumn 56, Issue 1-2, 2001, Pages 93-98

  Segal, A S ^a   Galyukov, A O ^a   Kondratyev, A V ^a   Sid'ko, A P ^a   Karpov, S Yu ^a   Makarov, Yu N ^b   Siebert, W ^c   Storck, P ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c SILTRONIC AG   (Germany)

Author keywords

200 300 mm wafers; CVD; Epitaxy; Silicon; Trichlorosilane

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; REACTION KINETICS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY;

SILICON EPILAYERS; TRICHLOROSILANES;

SILICON WAFERS;

EID: 0035341932     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00509-8     Document Type: Article

References (4)

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3. M.D. Allendorf, T.H. Osterheld, Mater. Res. Soc. Proc. 363 (1995) 39-44.
4. P.A. Coon, P. Gupta, M.L. Wise, S.M. George, J. Vac. Sci. Tech. A10 (1992) 324.