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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 256-259

The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes

(5) Henry, M O a McGlynn, E a Fryar, J a Lindner, S a Bollmann, J b

a DUBLIN CITY UNIVERSITY (Ireland)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; ION IMPLANTATION; LITHIUM; MERCURY (METAL); PHOTOLUMINESCENCE; POINT DEFECTS; RADIOISOTOPES;

RADIOACTIVE IONS;

SEMICONDUCTOR MATERIALS;

EID: 0035333940 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00474-2 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.