Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 773-776

  Mao, Lingfeng ^a   Tan, Changhua ^a   Xu, Mingzhen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Metal oxide semiconductor structure; Roughness; Tunneling

Indexed keywords

INTERFACES (MATERIALS); OSCILLATIONS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SILICA; SURFACE ROUGHNESS;

GAUSS DISTRIBUTION;

MOSFET DEVICES;

EID: 0035333112     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00122-8     Document Type: Article

References (19)