Fabrication of Si/LiNbO3 structure by using film bonding process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 B, 2001, Pages 3729-3733

  Kaneshiro, C ^a   Hirai, R ^a   Koh, K ^a   Hohkawa, K ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Film bonding process; Local heating process; Silicon; Surface acoustic wave

Indexed keywords

BONDING; ETCHING; HEAT TREATMENT; INFRARED DEVICES; MICROWAVE HEATING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; THIN FILMS;

FILM BONDING PROCESS;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0035327777     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3729     Document Type: Article

References (10)