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Volumn 226-230, Issue PART I, 2001, Pages 80-82
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High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2
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Author keywords
Pressure effect; Quantum critical point; Superconductivity
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Indexed keywords
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EID: 0035326971
PISSN: 03048853
EISSN: None
Source Type: Journal
DOI: 10.1016/S0304-8853(00)00785-X Document Type: Article |
Times cited : (4)
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References (8)
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