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Volumn 226-230, Issue PART I, 2001, Pages 80-82

High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2

Author keywords

Pressure effect; Quantum critical point; Superconductivity

Indexed keywords


EID: 0035326971     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(00)00785-X     Document Type: Article
Times cited : (4)

References (8)
  • 8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.