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Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 320-330

Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe

(3) Radantsev, V F a Yafyasov, A M b Bogevolnov, V B b

a URAL FEDERAL UNIVERSITY (Russian Federation)

b ST PETERSBURG STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETIC FIELD EFFECTS; OSCILLATIONS; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS; THERMAL EFFECTS; TWO DIMENSIONAL;

KANE SEMICONDUCTORS; LANDAU LEVELS; MAGNETO OSCILLATIONS; MAGNETOCAPACITANCE SPECTROSCOPY; MERCURY MANGANESE TELLURIDE; SPIN ORBIT; SPIN ORBIT EFFECTS;

MERCURY COMPOUNDS;

EID: 0035326602 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/5/308 Document Type: Article

Times cited : (11)

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