Electron field emission characteristics of textured silicon surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 884-887

  Fung, Y M ^a   Cheung, W Y ^a   Wilson, I H ^a   Chen, Dihu ^a   Xu, J B ^a   Wong, S P ^a   Kwok, R W M ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRON EMISSION; ETCHING; OXIDATION; SCANNING ELECTRON MICROSCOPY; SOLUTIONS; SUBSTRATES; SURFACE ROUGHNESS;

TEXTURED SILICON SURFACES;

SILICON WAFERS;

EID: 0035326482     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1361040     Document Type: Conference Paper

References (5)

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5. D. Chen, W. Y. Cheung, S. P. Wong, Y. M. Fung, J. B. Xu, I. H. Wilson, and R. W. M. Kwok, J. Vac. Sci. Technol. A 17, 2019 (1999).