A new type of defect on {112̄0} planes in β-Si3N4 produced by neutron irradiation

Philosophical Magazine Letters

Volumn 81, Issue 4, 2001, Pages 251-258

  Akiyoshi, Masafumi ^a   Yano, Toyohiko ^a   Jenkins, Mike L ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ANALYSIS; MATHEMATICAL MODELS; NEUTRON IRRADIATION; VECTORS;

PLANAR DEFECTS;

SILICON NITRIDE;

EID: 0035322606     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/09500830010024657     Document Type: Article

References (7)