The growth of aligned AIN-nanocrystals in aluminium after nitrogen-ion implantation at 330 K

Thin Solid Films

Volumn 385, Issue 1-2, 2001, Pages 29-35

  Reier, T ^a   Schultze, J W ^b   Osterle W ^c   Buchai, Ch ^a  

^a HEINRICH HEINE UNIVERSITY   (Germany)

^b BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A1N; Al2O3; Diffusion; Ion implantation; Nanocrystals

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; CRYSTAL GROWTH; ION IMPLANTATION; NUCLEATION; THERMAL DIFFUSION IN SOLIDS;

NANOCRYSTALS; STRAIN ENHANCED DIFFUSION;

NANOSTRUCTURED MATERIALS;

EID: 0035312060     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01927-1     Document Type: Article

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