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Journal of Non-Crystalline Solids

Volumn 282, Issue 2-3, 2001, Pages 165-172

Structural changes in amorphous silicon studied by X-ray photoemission spectroscopy: A phenomenon independent of the Staebler-Wronski effect?

(3) Sheng, Shuran a,b Sacher, Edward a Yelon, Arthur a

a ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; HYDROGEN; HYDROGENATION; X RAY PHOTOELECTRON SPECTROSCOPY;

X RAY IRRADIATION;

AMORPHOUS SILICON;

EID: 0035311490 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00339-8 Document Type: Article

Times cited : (12)

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