Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond

Microelectronics Journal

Volumn 32, Issue 4, 2001, Pages 327-329

  Gamal, S H ^a   Al Harbi, T S ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

Diamond; Monte Carlo; Silicon

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRONIC DENSITY OF STATES; HIGH TEMPERATURE EFFECTS; MONTE CARLO METHODS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

HIGH TEMPERATURE HOLE TRANSPORT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0035311299     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00147-6     Document Type: Article

References (11)

1. Characterization of conducting diamond films
2. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
3. Energy band structure in p-type germanium and silicon
4. Diffusion coefficient of holes in silicon by Monte Carlo simulation
5. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blend structures - Part I: Homogeneous transport
6. Monte Carlo simulations of high energy electrons and holes in Si n-MOSFET's
7. Nonparabolicity and intrinsic carrier concentration in Si and Ge
8. Hole-drift velocity in natural diamond