Characterization of Cu doped CdSe thin films grown by vacuum evaporation

Journal of Crystal Growth

Volumn 224, Issue 1-2, 2001, Pages 74-82

  Ramaiah, K Subba ^a   Su, Y K ^a   Chang, S J ^a   Juang, F S ^b   Ohdaira, K ^c   Shiraki, Y ^c   Liu, H P ^a   Chen, I G ^a   Bhatnagar, A K ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF HYDERABAD   (India)

Author keywords

A1. Characterization; A1. X ray diffraction; A3. Physical vapor deposition processes; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

DOPING (ADDITIVES); EMISSION SPECTROSCOPY; FILM GROWTH; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; THIN FILMS; VACUUM APPLICATIONS;

VACUUM EVAPORATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035310835     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00697-2     Document Type: Article

References (19)