Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AIAs superlattices

Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 239-242

  Li, Chang Yi ^a   Sun, Bao Quan ^a   Jiang, De Sheng ^a   Wang, Jian Nong ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; GRAIN BOUNDARIES; HYSTERESIS; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; OSCILLATIONS; PHASE TRANSITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ALUMINUM ARSENIDE; DOMAIN BOUNDARY; DRIFT VELOCITY; HYSTERESIS EFFECT; PEAK VALLEY RATIO; TEMPERATURE INDUCED TRANSITION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035309974     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/4/309     Document Type: Article

References (12)