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Journal of Crystal Growth

Volumn 224, Issue 3-4, 2001, Pages 294-302

Advances in crystal growth and characterizations of gallium orthophosphate GaPO4

(7) Yot, P a Cambon, O a Balitsky, D a Goiffon, A a Philippot, E a Capelle, B b,c Detaint J b

a UNIVERSITÉ DE MONTPELLIER (France)

b LMCP (France)

c UNIVERSITÉ PARIS SACLAY (France)

Author keywords

A1. Defects; A1. Solubility; A1. X ray topography; A2. Hydrothermal crystal growth; A2. Single crystal growth; B2. Piezoelectric material

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; SINGLE CRYSTALS; SOLUBILITY; THERMODYNAMIC STABILITY;

GALLIUM ORTHOPHOSPHATES; HYDROTHERMAL CRYSTAL GROWTH; X RAY TOPOGRAPHY;

GALLIUM COMPOUNDS;

EID: 0035309085 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01013-2 Document Type: Article

Times cited : (31)

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