Synchrotron white-beam topographic studies of 2H-SiC crystals

Journal of Crystal Growth

Volumn 224, Issue 3-4, 2001, Pages 269-273

  Vetter, William M ^a   Huang, Wei ^a   Neudeck, Philip ^b   Powell, J Anthony ^b   Dudley, Michael ^a  

^a Stony Brook University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

A1. X ray topography; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting materials

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); NUCLEATION; REDUCTION; SILANES; SILICON CARBIDE; SINGLE CRYSTALS; THERMODYNAMICS; VAPORS; VECTORS;

BURGERS VECTORS; METHYLTRICHLOROSILANE; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035309058     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00971-X     Document Type: Article

References (16)