Cryogenic noise parameter measurements of microwave devices

IEEE Transactions on Instrumentation and Measurement

Volumn 50, Issue 2, 2001, Pages 373-376

  Rolfes, I ^a   Musch, T ^a   Schiek, B ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Cryogenic measurements; Noise measurements; Noise parameters; Power measurements

Indexed keywords

CRYOGENICS; ELECTRIC ADMITTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING;

ALUMINUM GALLIUM ARSENIDE; COLD NOISE POWER MEASUREMENT; CRYOGENIC NOISE PARAMETER MEASUREMENTS; DEVICE UNDER TEST; INDIUM GALLIUM ARSENIDE; INPUT ADMITTANCE;

SIGNAL NOISE MEASUREMENT;

EID: 0035308314     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.918145     Document Type: Article

References (6)