Silicon molar volume discrepancy: Studies of the NRLM crystal

IEEE Transactions on Instrumentation and Measurement

Volumn 50, Issue 2, 2001, Pages 601-603

  Nakayama, Kan ^a   Fujimoto, Hiroyuki ^a   Ishikawa, Tetsuya ^b   Takeno, Hiroshi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b RIKEN HARIMA INSTITUTE   (Japan)

^c Isobe Research and Development Center   (Japan)

Author keywords

Avogadro constant; Defects; Laser scattering tomography; Molar volume; Silicon

Indexed keywords

CRYSTAL DEFECTS; CRYSTALS; DENSITY (SPECIFIC GRAVITY); ELECTRON SPIN RESONANCE SPECTROSCOPY; ETCHING; INFRARED RADIATION; LASER APPLICATIONS; SCATTERING; SURFACE TOPOGRAPHY; TOMOGRAPHY; VOLUME MEASUREMENT; X RAY ANALYSIS;

AVOGADRO CONSTANT; INFRARED LASER SCATTERING TOMOGRAPHY; MOLAR VOLUME; SECCON ETCHING; SILICON CRYSTALS; X RAY AND CRYSTAL DENSITY; X RAY TOPOGRAPHY;

SILICON;

EID: 0035307010     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.918201     Document Type: Article

References (10)