A 3 V small chip size GSM HBT power MMIC with 56 percent PAE

Microwave Journal

Volumn 44, Issue 4, 2001, Pages 20-42

  Mueller, J E ^a   Gerlach, U ^a   Madonna, G L ^a   Pfost, M ^a   Schultheis, R ^a   Zwicknagl, P ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS);

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROPROCESSOR CHIPS; MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035305898     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. W. Liu, "Thermal Management to Avoid the Collapse of Current Gain in Power Heterojunction Bipolar Transistors," 17th Annual IEEE GaAs IC Symposium Digest, San Diego, CA, October 1995, pp. 147-150.
2. J.E. Mueller, P. Baureis, O. Berger, T. Boettner, N. Bovolon, R. Schultheis, G. Packeiser and P. Zwicknagl, "A Small Chip Size 2 W, 62 Percent Efficient HBT MMIC for 3V PCN Applications," IEEE Journal of Solid-State Circuits, Vol. 33, September 1998, pp. 1277-1283.
3. I. Getreu, Modeling the Bipolar Transistor, Elsevier Science Publishers, Amsterdam, 1978.
4. R. Schultheis, N. Bovolon, J.E. Mueller and P. Zwicknagl, "Electrothermal Modeling of Heterojunction Bipolar Transistors (HBTs)," Conference Proceedings of 11th III-V Semiconductor Device Simulatiom Workshop, May 1999, Lille, France.
5. N. Bovolon, P. Baureis, J.E. Mueller, P. Zwicknagl, R. Schultheis and E. Zanoni, "A Simple Method for the Thermal Resistance Measurement of AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Transactions on Electron Devices, Vol. 45, August 1998, pp. 1846-1848.
6. A. Ferrero, G.L. Madonna and U. Pisani, "Recent Technological Advances for Modular Active Harmonic Load-pull Measurement Systems," Conference Proceedings of GAAS99, October 1999, pp. 403-406.