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20
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85035293692
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The temperature dependencies of C and W have been neglected in Eq. (9). They are not well understood; they will depend upon the absolute temperature T rather than the reduced temperature t. Perhaps, at most, C and W might exhibit a weak linear dependence upon T. In Ref. 2 we neglected any temperature dependence associated with W for nonionic films and found scaling for the function (Formula presented) when plotted against (Formula presented). A posteriori therefore the temperature dependence of W is indeed small otherwise scaling would not have been found
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The temperature dependencies of C and W have been neglected in Eq. (9). They are not well understood; they will depend upon the absolute temperature T rather than the reduced temperature t. Perhaps, at most, C and W might exhibit a weak linear dependence upon T. In Ref. 2 we neglected any temperature dependence associated with W for nonionic films and found scaling for the function (Formula presented) when plotted against (Formula presented). A posteriori therefore the temperature dependence of W is indeed small otherwise scaling would not have been found.
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27
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85035291111
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The value of the Hamaker constant for the mixture AN on a Si wafer substrate listed in Table I (Formula presented) is approximately two to three orders of magnitude smaller than theoretical expectation 8. The DLP theory predicts a film thickness of the order of (Formula presented) at (Formula presented) for organic liquids on a Si wafer substrate, in contrast to our observations of only (Formula presented) for the film thickness at this height. We believe that the small value for the “effective” Hamaker constant W is due to the fact that AN probably only partially wets the Si wafer surface; Eq. (3) is strictly only correct under complete wetting conditions
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The value of the Hamaker constant for the mixture AN on a Si wafer substrate listed in Table I (Formula presented) is approximately two to three orders of magnitude smaller than theoretical expectation 8. The DLP theory predicts a film thickness of the order of (Formula presented) at (Formula presented) for organic liquids on a Si wafer substrate, in contrast to our observations of only (Formula presented) for the film thickness at this height. We believe that the small value for the “effective” Hamaker constant W is due to the fact that AN probably only partially wets the Si wafer surface; Eq. (3) is strictly only correct under complete wetting conditions.
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35
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3042891603
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R. C. Weast, M. J. Astle, and W. H. Beyer CRC, Boca Raton
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Handbook of Chemistry and Physics, 66th ed., edited by R. C. Weast, M. J. Astle, and W. H. Beyer (CRC, Boca Raton, 1985).
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(1985)
Handbook of Chemistry and Physics
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