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Volumn 63, Issue 4, 2001, Pages

Casimir force in a critical film formed from an electrolytic solution

Author keywords

[No Author keywords available]

Indexed keywords

ACETIC ACID; ADSORPTION; BINARY MIXTURES; ELECTROLYTES; ELLIPSOMETRY; FREE ENERGY; MATHEMATICAL MODELS; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS;

EID: 0035304910     PISSN: 1063651X     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevE.63.041605     Document Type: Article
Times cited : (9)

References (35)
  • 20
    • 85035293692 scopus 로고    scopus 로고
    • The temperature dependencies of C and W have been neglected in Eq. (9). They are not well understood; they will depend upon the absolute temperature T rather than the reduced temperature t. Perhaps, at most, C and W might exhibit a weak linear dependence upon T. In Ref. 2 we neglected any temperature dependence associated with W for nonionic films and found scaling for the function (Formula presented) when plotted against (Formula presented). A posteriori therefore the temperature dependence of W is indeed small otherwise scaling would not have been found
    • The temperature dependencies of C and W have been neglected in Eq. (9). They are not well understood; they will depend upon the absolute temperature T rather than the reduced temperature t. Perhaps, at most, C and W might exhibit a weak linear dependence upon T. In Ref. 2 we neglected any temperature dependence associated with W for nonionic films and found scaling for the function (Formula presented) when plotted against (Formula presented). A posteriori therefore the temperature dependence of W is indeed small otherwise scaling would not have been found.
  • 27
    • 85035291111 scopus 로고    scopus 로고
    • The value of the Hamaker constant for the mixture AN on a Si wafer substrate listed in Table I (Formula presented) is approximately two to three orders of magnitude smaller than theoretical expectation 8. The DLP theory predicts a film thickness of the order of (Formula presented) at (Formula presented) for organic liquids on a Si wafer substrate, in contrast to our observations of only (Formula presented) for the film thickness at this height. We believe that the small value for the “effective” Hamaker constant W is due to the fact that AN probably only partially wets the Si wafer surface; Eq. (3) is strictly only correct under complete wetting conditions
    • The value of the Hamaker constant for the mixture AN on a Si wafer substrate listed in Table I (Formula presented) is approximately two to three orders of magnitude smaller than theoretical expectation 8. The DLP theory predicts a film thickness of the order of (Formula presented) at (Formula presented) for organic liquids on a Si wafer substrate, in contrast to our observations of only (Formula presented) for the film thickness at this height. We believe that the small value for the “effective” Hamaker constant W is due to the fact that AN probably only partially wets the Si wafer surface; Eq. (3) is strictly only correct under complete wetting conditions.
  • 35
    • 3042891603 scopus 로고
    • R. C. Weast, M. J. Astle, and W. H. Beyer CRC, Boca Raton
    • Handbook of Chemistry and Physics, 66th ed., edited by R. C. Weast, M. J. Astle, and W. H. Beyer (CRC, Boca Raton, 1985).
    • (1985) Handbook of Chemistry and Physics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.