Range parameters of 18O implanted into Si and SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 46-50

  De Souza, J P ^a   Behar, M ^a   Dias, J F ^a   Dos Santos, J H R ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Ranges; Stopping power

Indexed keywords

OXYGEN; SILICA; SILICON;

DEPTH PROFILING; NUCLEAR RESONANT REACTIONS; STOPPING POWER;

ION IMPLANTATION;

EID: 0035302908     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00525-5     Document Type: Conference Paper

References (13)