High pressure annealing of defects induced by ion implantation on graphite

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 474-478

  Soares, S R S ^a   Balzaretti, N M ^a   Livi, R P ^a   Pereira, A S ^a   Da Jornada, J A H ^a,b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

Author keywords

Disordered graphite; High pressure annealing; Ion implantation; Raman spectroscopy

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; GRAPHITE; GRAPHITIZATION; HIGH PRESSURE EFFECTS IN SOLIDS; RAMAN SPECTROSCOPY; THERMODYNAMICS;

HIGH PRESSURE ANNEALING;

ION IMPLANTATION;

EID: 0035302278     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00601-7     Document Type: Conference Paper

References (12)